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IPB052N04NGATMA1

IPB052N04NGATMA1

For Reference Only

Part Number IPB052N04NGATMA1
PNEDA Part # IPB052N04NGATMA1
Description MOSFET N-CH 40V 70A TO263-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,106
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB052N04NGATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB052N04NGATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPB052N04NGATMA1, IPB052N04NGATMA1 Datasheet (Total Pages: 9, Size: 441.15 KB)
PDFIPB052N04NGATMA1 Datasheet Cover
IPB052N04NGATMA1 Datasheet Page 2 IPB052N04NGATMA1 Datasheet Page 3 IPB052N04NGATMA1 Datasheet Page 4 IPB052N04NGATMA1 Datasheet Page 5 IPB052N04NGATMA1 Datasheet Page 6 IPB052N04NGATMA1 Datasheet Page 7 IPB052N04NGATMA1 Datasheet Page 8 IPB052N04NGATMA1 Datasheet Page 9

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IPB052N04NGATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5.2mOhm @ 70A, 10V
Vgs(th) (Max) @ Id4V @ 33µA
Gate Charge (Qg) (Max) @ Vgs42nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3300pF @ 20V
FET Feature-
Power Dissipation (Max)79W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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