IPB049N08N5ATMA1

For Reference Only
Part Number | IPB049N08N5ATMA1 |
PNEDA Part # | IPB049N08N5ATMA1 |
Description | MOSFET N-CH 80V TO263-3 |
Manufacturer | Infineon Technologies |
Unit Price | Request a Quote |
In Stock | 2,100 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Mar 18 - Mar 23 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPB049N08N5ATMA1 Resources
Brand | Infineon Technologies |
ECAD Module |
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Mfr. Part Number | IPB049N08N5ATMA1 |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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IPB049N08N5ATMA1 Specifications
Manufacturer | Infineon Technologies |
Series | OptiMOS™ |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 4.9mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id | 3.8V @ 66µA |
Gate Charge (Qg) (Max) @ Vgs | 53nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3770pF @ 40V |
FET Feature | - |
Power Dissipation (Max) | 125W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²PAK (TO-263AB) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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