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IPB048N06LGATMA1

IPB048N06LGATMA1

For Reference Only

Part Number IPB048N06LGATMA1
PNEDA Part # IPB048N06LGATMA1
Description MOSFET N-CH 60V 100A TO-263
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,370
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB048N06LGATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB048N06LGATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPB048N06LGATMA1, IPB048N06LGATMA1 Datasheet (Total Pages: 10, Size: 375.16 KB)
PDFIPB048N06LGATMA1 Datasheet Cover
IPB048N06LGATMA1 Datasheet Page 2 IPB048N06LGATMA1 Datasheet Page 3 IPB048N06LGATMA1 Datasheet Page 4 IPB048N06LGATMA1 Datasheet Page 5 IPB048N06LGATMA1 Datasheet Page 6 IPB048N06LGATMA1 Datasheet Page 7 IPB048N06LGATMA1 Datasheet Page 8 IPB048N06LGATMA1 Datasheet Page 9 IPB048N06LGATMA1 Datasheet Page 10

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IPB048N06LGATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id2V @ 270µA
Gate Charge (Qg) (Max) @ Vgs225nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7600pF @ 30V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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