IPB048N06LGATMA1
For Reference Only
| Part Number | IPB048N06LGATMA1 |
| PNEDA Part # | IPB048N06LGATMA1 |
| Description | MOSFET N-CH 60V 100A TO-263 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 8,370 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 20 - Mar 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IPB048N06LGATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | IPB048N06LGATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IPB048N06LGATMA1 Datasheet
- where to find IPB048N06LGATMA1
- Infineon Technologies
- Infineon Technologies IPB048N06LGATMA1
- IPB048N06LGATMA1 PDF Datasheet
- IPB048N06LGATMA1 Stock
- IPB048N06LGATMA1 Pinout
- Datasheet IPB048N06LGATMA1
- IPB048N06LGATMA1 Supplier
- Infineon Technologies Distributor
- IPB048N06LGATMA1 Price
- IPB048N06LGATMA1 Distributor
IPB048N06LGATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 270µA |
| Gate Charge (Qg) (Max) @ Vgs | 225nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 7600pF @ 30V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK (TO-263AB) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
The Products You May Be Interested In
|
Manufacturer Infineon Technologies Series CoolSiC™ FET Type N-Channel Technology SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss) 1.2kV Current - Continuous Drain (Id) @ 25°C 52A (Tc) Drive Voltage (Max Rds On, Min Rds On) 15V Rds On (Max) @ Id, Vgs 59mOhm @ 20A, 15V Vgs(th) (Max) @ Id 5.7V @ 10mA Gate Charge (Qg) (Max) @ Vgs 52nC @ 15V Vgs (Max) +20V, -10V Input Capacitance (Ciss) (Max) @ Vds 1.9nF @ 800V FET Feature - Power Dissipation (Max) 228W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO247-3-41 Package / Case TO-247-3 |
Manufacturer Toshiba Semiconductor and Storage Series U-MOSVIII-H FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 36mOhm @ 5A, 10V Vgs(th) (Max) @ Id 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 9.3nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 550pF @ 10V FET Feature - Power Dissipation (Max) 1.2W (Ta) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23F Package / Case SOT-23-3 Flat Leads |
Manufacturer Infineon Technologies Series * FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |
Manufacturer Diodes Incorporated Series * FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 230mOhm @ 6A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 770pF @ 25V FET Feature - Power Dissipation (Max) 60W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
