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IPB042N10N3GATMA1

IPB042N10N3GATMA1

For Reference Only

Part Number IPB042N10N3GATMA1
PNEDA Part # IPB042N10N3GATMA1
Description MOSFET N-CH 100V 100A TO263-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 20,316
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 19 - Mar 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB042N10N3GATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB042N10N3GATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPB042N10N3GATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs4.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs117nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8410pF @ 50V
FET Feature-
Power Dissipation (Max)214W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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