IPAN50R500CEXKSA1
For Reference Only
| Part Number | IPAN50R500CEXKSA1 |
| PNEDA Part # | IPAN50R500CEXKSA1 |
| Description | MOSFET NCH 500V 11.1A TO220-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 8,856 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 6 - Apr 11 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPAN50R500CEXKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPAN50R500CEXKSA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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IPAN50R500CEXKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 11.1A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 13V |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 2.3A, 13V |
| Vgs(th) (Max) @ Id | 3.5V @ 200µA |
| Gate Charge (Qg) (Max) @ Vgs | 18.7nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 433pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 28W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220 Full Pack |
| Package / Case | TO-220-3 Full Pack |
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 116A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 7mOhm @ 60A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 60nC @ 4.5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 3290pF @ 25V FET Feature - Power Dissipation (Max) 3.8W (Ta), 180W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
