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IPA90R1K0C3XKSA1

IPA90R1K0C3XKSA1

For Reference Only

Part Number IPA90R1K0C3XKSA1
PNEDA Part # IPA90R1K0C3XKSA1
Description MOSFET N-CH 900V 5.7A TO220-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 12,780
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPA90R1K0C3XKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPA90R1K0C3XKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPA90R1K0C3XKSA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1Ohm @ 3.3A, 10V
Vgs(th) (Max) @ Id3.5V @ 370µA
Gate Charge (Qg) (Max) @ Vgs34nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds850pF @ 100V
FET Feature-
Power Dissipation (Max)32W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-FP
Package / CaseTO-220-3 Full Pack

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