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IPA80R1K2P7XKSA1

IPA80R1K2P7XKSA1

For Reference Only

Part Number IPA80R1K2P7XKSA1
PNEDA Part # IPA80R1K2P7XKSA1
Description MOSFET N-CH 800V 4.5A TO220
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,320
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPA80R1K2P7XKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPA80R1K2P7XKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPA80R1K2P7XKSA1, IPA80R1K2P7XKSA1 Datasheet (Total Pages: 13, Size: 948.96 KB)
PDFIPA80R1K2P7XKSA1 Datasheet Cover
IPA80R1K2P7XKSA1 Datasheet Page 2 IPA80R1K2P7XKSA1 Datasheet Page 3 IPA80R1K2P7XKSA1 Datasheet Page 4 IPA80R1K2P7XKSA1 Datasheet Page 5 IPA80R1K2P7XKSA1 Datasheet Page 6 IPA80R1K2P7XKSA1 Datasheet Page 7 IPA80R1K2P7XKSA1 Datasheet Page 8 IPA80R1K2P7XKSA1 Datasheet Page 9 IPA80R1K2P7XKSA1 Datasheet Page 10 IPA80R1K2P7XKSA1 Datasheet Page 11

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IPA80R1K2P7XKSA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ P7
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.2Ohm @ 1.7A, 10V
Vgs(th) (Max) @ Id3.5V @ 80µA
Gate Charge (Qg) (Max) @ Vgs11nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds300pF @ 500V
FET Feature-
Power Dissipation (Max)25W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220 Full Pack
Package / CaseTO-220-3 Full Pack

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