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IPA65R600C6XKSA1

IPA65R600C6XKSA1

For Reference Only

Part Number IPA65R600C6XKSA1
PNEDA Part # IPA65R600C6XKSA1
Description MOSFET N-CH 650V 7.3A TO220
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,626
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPA65R600C6XKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPA65R600C6XKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPA65R600C6XKSA1, IPA65R600C6XKSA1 Datasheet (Total Pages: 19, Size: 2,092.73 KB)
PDFIPB65R600C6ATMA1 Datasheet Cover
IPB65R600C6ATMA1 Datasheet Page 2 IPB65R600C6ATMA1 Datasheet Page 3 IPB65R600C6ATMA1 Datasheet Page 4 IPB65R600C6ATMA1 Datasheet Page 5 IPB65R600C6ATMA1 Datasheet Page 6 IPB65R600C6ATMA1 Datasheet Page 7 IPB65R600C6ATMA1 Datasheet Page 8 IPB65R600C6ATMA1 Datasheet Page 9 IPB65R600C6ATMA1 Datasheet Page 10 IPB65R600C6ATMA1 Datasheet Page 11

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IPA65R600C6XKSA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs600mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds440pF @ 100V
FET Feature-
Power Dissipation (Max)28W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220 Full Pack
Package / CaseTO-220-3 Full Pack

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