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IPA60R800CEXKSA1

IPA60R800CEXKSA1

For Reference Only

Part Number IPA60R800CEXKSA1
PNEDA Part # IPA60R800CEXKSA1
Description MOSFET N-CH 600V TO-220-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,436
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPA60R800CEXKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPA60R800CEXKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPA60R800CEXKSA1, IPA60R800CEXKSA1 Datasheet (Total Pages: 16, Size: 1,190.22 KB)
PDFIPD60R800CEATMA1 Datasheet Cover
IPD60R800CEATMA1 Datasheet Page 2 IPD60R800CEATMA1 Datasheet Page 3 IPD60R800CEATMA1 Datasheet Page 4 IPD60R800CEATMA1 Datasheet Page 5 IPD60R800CEATMA1 Datasheet Page 6 IPD60R800CEATMA1 Datasheet Page 7 IPD60R800CEATMA1 Datasheet Page 8 IPD60R800CEATMA1 Datasheet Page 9 IPD60R800CEATMA1 Datasheet Page 10 IPD60R800CEATMA1 Datasheet Page 11

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IPA60R800CEXKSA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ CE
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs800mOhm @ 2A, 10V
Vgs(th) (Max) @ Id3.5V @ 170µA
Gate Charge (Qg) (Max) @ Vgs17.2nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds373pF @ 100V
FET Feature-
Power Dissipation (Max)27W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-FP
Package / CaseTO-220-3 Full Pack

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