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IPA60R520E6XKSA1

IPA60R520E6XKSA1

For Reference Only

Part Number IPA60R520E6XKSA1
PNEDA Part # IPA60R520E6XKSA1
Description MOSFET N-CH 600V 8.1A TO220
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,132
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPA60R520E6XKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPA60R520E6XKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPA60R520E6XKSA1, IPA60R520E6XKSA1 Datasheet (Total Pages: 16, Size: 1,048.77 KB)
PDFIPA60R520E6XKSA1 Datasheet Cover
IPA60R520E6XKSA1 Datasheet Page 2 IPA60R520E6XKSA1 Datasheet Page 3 IPA60R520E6XKSA1 Datasheet Page 4 IPA60R520E6XKSA1 Datasheet Page 5 IPA60R520E6XKSA1 Datasheet Page 6 IPA60R520E6XKSA1 Datasheet Page 7 IPA60R520E6XKSA1 Datasheet Page 8 IPA60R520E6XKSA1 Datasheet Page 9 IPA60R520E6XKSA1 Datasheet Page 10 IPA60R520E6XKSA1 Datasheet Page 11

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IPA60R520E6XKSA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C8.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs520mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id3.5V @ 230µA
Gate Charge (Qg) (Max) @ Vgs23.4nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds512pF @ 100V
FET Feature-
Power Dissipation (Max)29W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-FP
Package / CaseTO-220-3 Full Pack

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