IPA60R380P6XKSA1
For Reference Only
| Part Number | IPA60R380P6XKSA1 |
| PNEDA Part # | IPA60R380P6XKSA1 |
| Description | MOSFET N-CH 600V TO220FP-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 10,824 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 20 - Mar 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPA60R380P6XKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPA60R380P6XKSA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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IPA60R380P6XKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ P6 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 10.6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 3.8A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 320µA |
| Gate Charge (Qg) (Max) @ Vgs | 19nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 877pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 31W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-FP |
| Package / Case | TO-220-3 Full Pack |
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 28A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 52mOhm @ 14A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds 1710pF @ 25V FET Feature - Power Dissipation (Max) 107W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 21A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 3.5mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2V @ 36µA Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5100pF @ 20V FET Feature - Power Dissipation (Max) 2.5W (Ta), 69W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TDSON-8-1 Package / Case 8-PowerTDFN |
Manufacturer Infineon Technologies Series CoolMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 700V Current - Continuous Drain (Id) @ 25°C 4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2Ohm @ 1A, 10V Vgs(th) (Max) @ Id 3.5V @ 70µA Gate Charge (Qg) (Max) @ Vgs 7.8nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 163pF @ 100V FET Feature Super Junction Power Dissipation (Max) 42W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
