IPA60R280P6XKSA1
For Reference Only
| Part Number | IPA60R280P6XKSA1 |
| PNEDA Part # | IPA60R280P6XKSA1 |
| Description | MOSFET N-CH 600V TO220FP-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 7,320 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 18 - Mar 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IPA60R280P6XKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | IPA60R280P6XKSA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IPA60R280P6XKSA1 Datasheet
- where to find IPA60R280P6XKSA1
- Infineon Technologies
- Infineon Technologies IPA60R280P6XKSA1
- IPA60R280P6XKSA1 PDF Datasheet
- IPA60R280P6XKSA1 Stock
- IPA60R280P6XKSA1 Pinout
- Datasheet IPA60R280P6XKSA1
- IPA60R280P6XKSA1 Supplier
- Infineon Technologies Distributor
- IPA60R280P6XKSA1 Price
- IPA60R280P6XKSA1 Distributor
IPA60R280P6XKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ P6 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 13.8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 5.2A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 430µA |
| Gate Charge (Qg) (Max) @ Vgs | 25.5nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1190pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 32W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-FP |
| Package / Case | TO-220-3 Full Pack |
The Products You May Be Interested In
|
Manufacturer Infineon Technologies Series CoolMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 400mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3Ohm @ 1.1A, 10V Vgs(th) (Max) @ Id 5.5V @ 80µA Gate Charge (Qg) (Max) @ Vgs 7.4nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 250pF @ 25V FET Feature - Power Dissipation (Max) 1.8W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-SOT223-4 Package / Case TO-261-4, TO-261AA |
Manufacturer ON Semiconductor Series Automotive, AEC-Q101, PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 65A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 5.6mOhm @ 65A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 54nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2560pF @ 30V FET Feature - Power Dissipation (Max) 100W (Tj) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package Power56 Package / Case 8-PowerTDFN |
Manufacturer Diodes Incorporated Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 52mOhm @ 4.2A, 4.5V Vgs(th) (Max) @ Id 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 10.2nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 808pF @ 15V FET Feature - Power Dissipation (Max) 1.4W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23 Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 3.3A (Ta), 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 60mOhm @ 3.2A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6.7nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 235pF @ 15V FET Feature - Power Dissipation (Max) 1.1W (Ta), 1.7W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer NXP USA Inc. Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 15Ohm @ 200mA, 10V Vgs(th) (Max) @ Id 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) 20V Input Capacitance (Ciss) (Max) @ Vds 90pF @ 25V FET Feature - Power Dissipation (Max) 1W (Ta) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-92-3 Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
