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IPA50R650CEXKSA2

IPA50R650CEXKSA2

For Reference Only

Part Number IPA50R650CEXKSA2
PNEDA Part # IPA50R650CEXKSA2
Description MOSFET N-CH 500V 4.6A TO-220FP
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,470
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPA50R650CEXKSA2 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPA50R650CEXKSA2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPA50R650CEXKSA2, IPA50R650CEXKSA2 Datasheet (Total Pages: 13, Size: 951.05 KB)
PDFIPA50R650CEXKSA2 Datasheet Cover
IPA50R650CEXKSA2 Datasheet Page 2 IPA50R650CEXKSA2 Datasheet Page 3 IPA50R650CEXKSA2 Datasheet Page 4 IPA50R650CEXKSA2 Datasheet Page 5 IPA50R650CEXKSA2 Datasheet Page 6 IPA50R650CEXKSA2 Datasheet Page 7 IPA50R650CEXKSA2 Datasheet Page 8 IPA50R650CEXKSA2 Datasheet Page 9 IPA50R650CEXKSA2 Datasheet Page 10 IPA50R650CEXKSA2 Datasheet Page 11

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IPA50R650CEXKSA2 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ CE
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)13V
Rds On (Max) @ Id, Vgs650mOhm @ 1.8A, 13V
Vgs(th) (Max) @ Id3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds342pF @ 100V
FET Feature-
Power Dissipation (Max)27.2W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220 Full Pack
Package / CaseTO-220-3 Full Pack

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