Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPA083N10N5XKSA1

IPA083N10N5XKSA1

For Reference Only

Part Number IPA083N10N5XKSA1
PNEDA Part # IPA083N10N5XKSA1
Description MOSFET N-CH 100V 45A TO220-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 12,156
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPA083N10N5XKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPA083N10N5XKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPA083N10N5XKSA1 Datasheet
  • where to find IPA083N10N5XKSA1
  • Infineon Technologies

  • Infineon Technologies IPA083N10N5XKSA1
  • IPA083N10N5XKSA1 PDF Datasheet
  • IPA083N10N5XKSA1 Stock

  • IPA083N10N5XKSA1 Pinout
  • Datasheet IPA083N10N5XKSA1
  • IPA083N10N5XKSA1 Supplier

  • Infineon Technologies Distributor
  • IPA083N10N5XKSA1 Price
  • IPA083N10N5XKSA1 Distributor

IPA083N10N5XKSA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs8.3mOhm @ 44A, 10V
Vgs(th) (Max) @ Id3.8V @ 49µA
Gate Charge (Qg) (Max) @ Vgs37nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2730pF @ 50V
FET Feature-
Power Dissipation (Max)36W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-FP
Package / CaseTO-220-3 Full Pack

The Products You May Be Interested In

IRL3803SPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

140A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6mOhm @ 71A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

140nC @ 4.5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

5000pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 200W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

220A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6.2mOhm @ 110A, 10V

Vgs(th) (Max) @ Id

4.5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

204nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

13600pF @ 25V

FET Feature

-

Power Dissipation (Max)

960W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-3

IRFZ46ZSTRLPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

51A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

13.6mOhm @ 31A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

46nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1460pF @ 25V

FET Feature

-

Power Dissipation (Max)

82W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

ZXMN2A02N8TA

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

8.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

20mOhm @ 11A, 4.5V

Vgs(th) (Max) @ Id

700mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18.9nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

1900pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.56W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

FDD390N15A

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

26A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

40mOhm @ 26A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18.6nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1285pF @ 75V

FET Feature

-

Power Dissipation (Max)

63W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

74HC573D

74HC573D

Toshiba Semiconductor and Storage

IC LATCH OCTAL D 3ST 20SOIC

BC817-40-7-F

BC817-40-7-F

Diodes Incorporated

TRANS NPN 45V 500MA SOT23-3

FM25V02A-DG

FM25V02A-DG

Cypress Semiconductor

IC FRAM 256K SPI 40MHZ 8DFN

ZVP4424GTA

ZVP4424GTA

Diodes Incorporated

MOSFET P-CH 240V 0.48A SOT223

LTM8045IY#PBF

LTM8045IY#PBF

Linear Technology/Analog Devices

DC DC CONVERTER +/-2.5 +/-15V

SI7114DN-T1-E3

SI7114DN-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 11.7A 1212-8

SP3232EEN-L

SP3232EEN-L

MaxLinear, Inc.

IC TRANSCEIVER FULL 2/2 16SOIC

LT1118CST-2.5#TRPBF

LT1118CST-2.5#TRPBF

Linear Technology/Analog Devices

IC REG LIN 2.5V 800MA SOT223-3

MCP79410T-I/MS

MCP79410T-I/MS

Microchip Technology

IC RTC CLK/CALENDAR I2C 8-MSOP

AD8051ARTZ-R2

AD8051ARTZ-R2

Analog Devices

IC OPAMP VFB 1 CIRCUIT SOT23-5

MBRD1035CTLG

MBRD1035CTLG

ON Semiconductor

DIODE ARRAY SCHOTTKY 35V 5A DPAK

AD7942BRMZ

AD7942BRMZ

Analog Devices

IC ADC 14BIT SAR 10MSOP