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IPA057N06N3GXKSA1

IPA057N06N3GXKSA1

For Reference Only

Part Number IPA057N06N3GXKSA1
PNEDA Part # IPA057N06N3GXKSA1
Description MOSFET N-CH 60V 60A TO220-3-31
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 9,060
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 24 - Apr 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPA057N06N3GXKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPA057N06N3GXKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPA057N06N3GXKSA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5.7mOhm @ 60A, 10V
Vgs(th) (Max) @ Id4V @ 58µA
Gate Charge (Qg) (Max) @ Vgs82nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6600pF @ 30V
FET Feature-
Power Dissipation (Max)38W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-31 Full Pack
Package / CaseTO-220-3 Full Pack

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