IPA041N04NGXKSA1
For Reference Only
Part Number | IPA041N04NGXKSA1 |
PNEDA Part # | IPA041N04NGXKSA1 |
Description | MOSFET N-CH 40V TO220-3 |
Manufacturer | Infineon Technologies |
Unit Price | Request a Quote |
In Stock | 8,016 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Dec 20 - Dec 25 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
IPA041N04NGXKSA1 Resources
Brand | Infineon Technologies |
ECAD Module | |
Mfr. Part Number | IPA041N04NGXKSA1 |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IPA041N04NGXKSA1 Datasheet
- where to find IPA041N04NGXKSA1
- Infineon Technologies
- Infineon Technologies IPA041N04NGXKSA1
- IPA041N04NGXKSA1 PDF Datasheet
- IPA041N04NGXKSA1 Stock
- IPA041N04NGXKSA1 Pinout
- Datasheet IPA041N04NGXKSA1
- IPA041N04NGXKSA1 Supplier
- Infineon Technologies Distributor
- IPA041N04NGXKSA1 Price
- IPA041N04NGXKSA1 Distributor
IPA041N04NGXKSA1 Specifications
Manufacturer | Infineon Technologies |
Series | OptiMOS™ |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 4.1mOhm @ 70A, 10V |
Vgs(th) (Max) @ Id | 4V @ 45µA |
Gate Charge (Qg) (Max) @ Vgs | 56nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 4500pF @ 20V |
FET Feature | - |
Power Dissipation (Max) | 35W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO220-FP |
Package / Case | TO-220-3 Full Pack |
The Products You May Be Interested In
Infineon Technologies Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 21A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 3.5mOhm @ 21A, 10V Vgs(th) (Max) @ Id 2.35V @ 50µA Gate Charge (Qg) (Max) @ Vgs 30nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3175pF @ 15V FET Feature - Power Dissipation (Max) 2.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
Infineon Technologies Manufacturer Infineon Technologies Series SIPMOS® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 330mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2Ohm @ 330mA, 10V Vgs(th) (Max) @ Id 2V @ 80µA Gate Charge (Qg) (Max) @ Vgs 3.57nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 78pF @ 25V FET Feature - Power Dissipation (Max) 360mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 Package / Case TO-236-3, SC-59, SOT-23-3 |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 4.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 24mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15.8nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 1570pF @ 6V FET Feature - Power Dissipation (Max) 660mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-UDFN (1.6x1.6) Package / Case 6-PowerUFDFN |
Renesas Electronics America Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 45A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 3.8mOhm @ 22.5A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 27nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4400pF @ 10V FET Feature - Power Dissipation (Max) 25W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package LFPAK Package / Case SC-100, SOT-669 |
Infineon Technologies Manufacturer Infineon Technologies Series Automotive, AEC-Q101, OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5.5mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2.2V @ 20µA Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 2330pF @ 25V FET Feature - Power Dissipation (Max) 56W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3-11 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |