IKZ75N65EH5XKSA1
For Reference Only
| Part Number | IKZ75N65EH5XKSA1 |
| PNEDA Part # | IKZ75N65EH5XKSA1 |
| Description | IGBT 650V 90A W/DIO TO247-4 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 3,852 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 18 - Mar 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IKZ75N65EH5XKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IKZ75N65EH5XKSA1 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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IKZ75N65EH5XKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | TrenchStop™ 5 |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Current - Collector (Ic) (Max) | 90A |
| Current - Collector Pulsed (Icm) | 300A |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 75A |
| Power - Max | 395W |
| Switching Energy | 680µJ (on), 430µJ (off) |
| Input Type | Standard |
| Gate Charge | 166nC |
| Td (on/off) @ 25°C | 26ns/347ns |
| Test Condition | 400V, 37.5A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 58ns |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-4 |
| Supplier Device Package | PG-TO247-4 |
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Manufacturer STMicroelectronics Series - IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 80A Current - Collector Pulsed (Icm) 160A Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 40A Power - Max 468W Switching Energy 1.43mJ (on), 3.83mJ (off) Input Type Standard Gate Charge 129nC Td (on/off) @ 25°C 35ns/148ns Test Condition 600V, 40A, 15Ohm, 15V Reverse Recovery Time (trr) 355ns Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247-3 |
Manufacturer Renesas Electronics America Series - IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 60A Current - Collector Pulsed (Icm) - Vce(on) (Max) @ Vge, Ic 1.82V @ 15V, 30A Power - Max 235.8W Switching Energy - Input Type Standard Gate Charge - Td (on/off) @ 25°C 45ns/85ns Test Condition 400V, 30A, 5Ohm, 15V Reverse Recovery Time (trr) 140ns Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-3P-3, SC-65-3 Supplier Device Package TO-3P |
Manufacturer ON Semiconductor Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 440V Current - Collector (Ic) (Max) 20A Current - Collector Pulsed (Icm) 50A Vce(on) (Max) @ Vge, Ic 1.9V @ 4.5V, 20A Power - Max 150W Switching Energy - Input Type Logic Gate Charge - Td (on/off) @ 25°C -/5µs Test Condition 300V, 9A, 1kOhm, 5V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package D2PAK |
