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IKZ50N65EH5XKSA1

IKZ50N65EH5XKSA1

For Reference Only

Part Number IKZ50N65EH5XKSA1
PNEDA Part # IKZ50N65EH5XKSA1
Description IGBT 650V 50A CO-PACK TO-247-4
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,872
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IKZ50N65EH5XKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIKZ50N65EH5XKSA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IKZ50N65EH5XKSA1 Specifications

ManufacturerInfineon Technologies
SeriesTrenchStop™ 5
IGBT TypeTrench
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)85A
Current - Collector Pulsed (Icm)200A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 50A
Power - Max273W
Switching Energy410µJ (on), 190µJ (off)
Input TypeStandard
Gate Charge109nC
Td (on/off) @ 25°C20ns/250ns
Test Condition400V, 25A, 12Ohm, 15V
Reverse Recovery Time (trr)53ns
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-4
Supplier Device PackagePG-TO247-4

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

400A

Vce(on) (Max) @ Vge, Ic

1.45V @ 15V, 60A

Power - Max

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Switching Energy

1.4mJ (on), 3.5mJ (off)

Input Type

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Gate Charge

230nC

Td (on/off) @ 25°C

31ns/320ns

Test Condition

480V, 50A, 3Ohm, 15V

Reverse Recovery Time (trr)

140ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Manufacturer

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Series

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IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

12A

Current - Collector Pulsed (Icm)

52A

Vce(on) (Max) @ Vge, Ic

2.6V @ 15V, 6.5A

Power - Max

34W

Switching Energy

60µJ (on), 80µJ (off)

Input Type

Standard

Gate Charge

26nC

Td (on/off) @ 25°C

22ns/110ns

Test Condition

480V, 6.5A, 50Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

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Manufacturer

IXYS

Series

BIMOSFET™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

3000V

Current - Collector (Ic) (Max)

37A

Current - Collector Pulsed (Icm)

300A

Vce(on) (Max) @ Vge, Ic

6V @ 15V, 15A

Power - Max

300W

Switching Energy

9.15mJ (on), 1.4mJ (off)

Input Type

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Gate Charge

267nC

Td (on/off) @ 25°C

40ns/455ns

Test Condition

1500V, 15A, 10Ohm, 15V

Reverse Recovery Time (trr)

706ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

i4-Pac™-5 (3 Leads)

Supplier Device Package

ISOPLUS i4-PAC™

Manufacturer

IXYS

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

3.4V @ 15V, 20A

Power - Max

190W

Switching Energy

2.1mJ (off)

Input Type

Standard

Gate Charge

72nC

Td (on/off) @ 25°C

25ns/150ns

Test Condition

-

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXGH)

IRGS4056DPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

24A

Current - Collector Pulsed (Icm)

48A

Vce(on) (Max) @ Vge, Ic

1.85V @ 15V, 12A

Power - Max

140W

Switching Energy

75µJ (on), 225µJ (off)

Input Type

Standard

Gate Charge

25nC

Td (on/off) @ 25°C

31ns/83ns

Test Condition

400V, 12A, 22Ohm, 15V

Reverse Recovery Time (trr)

68ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK

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