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IKW50N65ES5XKSA1

IKW50N65ES5XKSA1

For Reference Only

Part Number IKW50N65ES5XKSA1
PNEDA Part # IKW50N65ES5XKSA1
Description IGBT TRENCH 650V 80A TO247-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,200
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IKW50N65ES5XKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIKW50N65ES5XKSA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IKW50N65ES5XKSA1 Specifications

ManufacturerInfineon Technologies
SeriesTrenchStop™
IGBT TypeTrench
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)80A
Current - Collector Pulsed (Icm)200A
Vce(on) (Max) @ Vge, Ic1.7V @ 15V, 50A
Power - Max274W
Switching Energy1.23mJ (on), 550µJ (off)
Input TypeStandard
Gate Charge120nC
Td (on/off) @ 25°C20ns/127ns
Test Condition400V, 50A, 8.2Ohm, 15V
Reverse Recovery Time (trr)70ns
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackagePG-TO247-3

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Current - Collector (Ic) (Max)

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600V, 35A, 5Ohm, 15V

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Operating Temperature

-40°C ~ 150°C (TJ)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Input Type

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Reverse Recovery Time (trr)

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Supplier Device Package

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