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IKW30N60DTPXKSA1

IKW30N60DTPXKSA1

For Reference Only

Part Number IKW30N60DTPXKSA1
PNEDA Part # IKW30N60DTPXKSA1
Description IGBT 600V 53A TO247-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 21,432
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 29 - Dec 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IKW30N60DTPXKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIKW30N60DTPXKSA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IKW30N60DTPXKSA1 Specifications

ManufacturerInfineon Technologies
SeriesTrenchStop™
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)53A
Current - Collector Pulsed (Icm)90A
Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 30A
Power - Max200W
Switching Energy710µJ (on), 420µJ (off)
Input TypeStandard
Gate Charge130nC
Td (on/off) @ 25°C15ns/179ns
Test Condition400V, 30A, 10.5Ohm, 15V
Reverse Recovery Time (trr)76ns
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackagePG-TO247-3

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

140A

Vce(on) (Max) @ Vge, Ic

3.3V @ 15V, 35A

Power - Max

350W

Switching Energy

3.8mJ (off)

Input Type

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Gate Charge

170nC

Td (on/off) @ 25°C

50ns/180ns

Test Condition

960V, 35A, 5Ohm, 15V

Reverse Recovery Time (trr)

60ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Supplier Device Package

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Microsemi

Manufacturer

Microsemi Corporation

Series

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IGBT Type

NPT, Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

134A

Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 50A

Power - Max

543W

Switching Energy

4495µJ (off)

Input Type

Standard

Gate Charge

315nC

Td (on/off) @ 25°C

28ns/320ns

Test Condition

800V, 50A, 2.2Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Supplier Device Package

-

Manufacturer

IXYS

Series

GenX4™, XPT™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

310A

Current - Collector Pulsed (Icm)

860A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 160A

Power - Max

940W

Switching Energy

3.3mJ (on), 1.88mJ (off)

Input Type

Standard

Gate Charge

425nC

Td (on/off) @ 25°C

52ns/220ns

Test Condition

400V, 80A, 1Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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FGH40N60SMD

ON Semiconductor

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 40A

Power - Max

349W

Switching Energy

870µJ (on), 260µJ (off)

Input Type

Standard

Gate Charge

119nC

Td (on/off) @ 25°C

12ns/92ns

Test Condition

400V, 40A, 6Ohm, 15V

Reverse Recovery Time (trr)

36ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

SKB06N60ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

12A

Current - Collector Pulsed (Icm)

24A

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 6A

Power - Max

68W

Switching Energy

215µJ

Input Type

Standard

Gate Charge

32nC

Td (on/off) @ 25°C

25ns/220ns

Test Condition

400V, 6A, 50Ohm, 15V

Reverse Recovery Time (trr)

200ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

PG-TO263-3-2

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