IHW50N65R5XKSA1
For Reference Only
| Part Number | IHW50N65R5XKSA1 |
| PNEDA Part # | IHW50N65R5XKSA1 |
| Description | IGBT 650V 80A 282W TO247 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 8,232 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 30 - Apr 4 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IHW50N65R5XKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IHW50N65R5XKSA1 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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IHW50N65R5XKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | TrenchStop® |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Current - Collector (Ic) (Max) | 80A |
| Current - Collector Pulsed (Icm) | 150A |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 50A |
| Power - Max | 282W |
| Switching Energy | 740µJ (on), 180µJ (off) |
| Input Type | Standard |
| Gate Charge | 230nC |
| Td (on/off) @ 25°C | 26ns/220ns |
| Test Condition | 400V, 25A, 8Ohm, 15V |
| Reverse Recovery Time (trr) | 95ns |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | PG-TO247-3 |
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Manufacturer Infineon Technologies Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 23A Current - Collector Pulsed (Icm) 92A Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 12A Power - Max 100W Switching Energy 160µJ (on), 200µJ (off) Input Type Standard Gate Charge 50nC Td (on/off) @ 25°C 17ns/78ns Test Condition 480V, 12A, 23Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package D2PAK |
Manufacturer Microsemi Corporation Series POWER MOS 8™ IGBT Type PT Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 183A Current - Collector Pulsed (Icm) 307A Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 62A Power - Max 780W Switching Energy 1.354mJ (on), 1.614mJ (off) Input Type Standard Gate Charge 294nC Td (on/off) @ 25°C 28ns/212ns Test Condition 400V, 62A, 4.7Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Variant Supplier Device Package - |
