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IHW30N100R

IHW30N100R

For Reference Only

Part Number IHW30N100R
PNEDA Part # IHW30N100R
Description IGBT 1000V 60A 412W TO247-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,258
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IHW30N100R Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIHW30N100R
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IHW30N100R, IHW30N100R Datasheet (Total Pages: 12, Size: 324.39 KB)
PDFIHW30N100R Datasheet Cover
IHW30N100R Datasheet Page 2 IHW30N100R Datasheet Page 3 IHW30N100R Datasheet Page 4 IHW30N100R Datasheet Page 5 IHW30N100R Datasheet Page 6 IHW30N100R Datasheet Page 7 IHW30N100R Datasheet Page 8 IHW30N100R Datasheet Page 9 IHW30N100R Datasheet Page 10 IHW30N100R Datasheet Page 11

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IHW30N100R Specifications

ManufacturerInfineon Technologies
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)1000V
Current - Collector (Ic) (Max)60A
Current - Collector Pulsed (Icm)90A
Vce(on) (Max) @ Vge, Ic1.7V @ 15V, 30A
Power - Max412W
Switching Energy2.1mJ (off)
Input TypeStandard
Gate Charge209nC
Td (on/off) @ 25°C-/846ns
Test Condition600V, 30A, 26Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackagePG-TO247-3

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

100A

Vce(on) (Max) @ Vge, Ic

1.95V @ 15V, 12A

Power - Max

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Switching Energy

160µJ (on), 120µJ (off)

Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

38W

Switching Energy

160µJ (on), 100µJ (off)

Input Type

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Gate Charge

19nC

Td (on/off) @ 25°C

11ns/51ns

Test Condition

480V, 5A, 100Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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ON Semiconductor

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

120nC

Td (on/off) @ 25°C

15ns/160ns

Test Condition

600V, 15A, 10Ohm, 15V

Reverse Recovery Time (trr)

330ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-3P-3, SC-65-3

Supplier Device Package

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

78A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

2.35V @ 15V, 30A

Power - Max

370W

Switching Energy

350µJ (on), 825µJ (off)

Input Type

Standard

Gate Charge

102nC

Td (on/off) @ 25°C

46ns/185ns

Test Condition

400V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

Manufacturer

IXYS

Series

GenX3™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

22A

Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

3V @ 15V, 12A

Power - Max

100W

Switching Energy

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Input Type

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Gate Charge

20.4nC

Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXGH)

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