IDW10G120C5BFKSA1
For Reference Only
| Part Number | IDW10G120C5BFKSA1 | ||||||||||||||||||
| PNEDA Part # | IDW10G120C5BFKSA1 | ||||||||||||||||||
| Description | DIODE SCHOTTKY 1.2KV 10A TO247-3 | ||||||||||||||||||
| Manufacturer | Infineon Technologies | ||||||||||||||||||
| Unit Price |
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| In Stock | 18 | ||||||||||||||||||
| Warehouses | Shipped from Hong Kong SAR | ||||||||||||||||||
| Estimated Delivery | Mar 21 - Mar 26 (Choose Expedited Shipping) | ||||||||||||||||||
| Guarantee | Up to 1 year [PNEDA-Warranty]* | ||||||||||||||||||
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IDW10G120C5BFKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IDW10G120C5BFKSA1 |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Arrays |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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IDW10G120C5BFKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolSiC™+ |
| Diode Configuration | 1 Pair Common Cathode |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200V |
| Current - Average Rectified (Io) (per Diode) | 17A |
| Voltage - Forward (Vf) (Max) @ If | 1.65V @ 5A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 40µA @ 1200V |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | PG-TO247-3-41 |
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Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) (per Diode) 400A (DC) Voltage - Forward (Vf) (Max) @ If 1.3V @ 200A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 125ns Current - Reverse Leakage @ Vr 25µA @ 50V Operating Temperature - Junction - Mounting Type Chassis Mount Package / Case Three Tower Supplier Device Package Three Tower |
Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 40V Current - Average Rectified (Io) (per Diode) 80A Voltage - Forward (Vf) (Max) @ If 600mV @ 80A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 2mA @ 40V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case TO-249AB Supplier Device Package TO-249AB |
