Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

HUFA76419D3S

HUFA76419D3S

For Reference Only

Part Number HUFA76419D3S
PNEDA Part # HUFA76419D3S
Description MOSFET N-CH 60V 20A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,016
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 1 - Apr 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HUFA76419D3S Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberHUFA76419D3S
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
HUFA76419D3S, HUFA76419D3S Datasheet (Total Pages: 10, Size: 197.86 KB)
PDFHUFA76419D3ST Datasheet Cover
HUFA76419D3ST Datasheet Page 2 HUFA76419D3ST Datasheet Page 3 HUFA76419D3ST Datasheet Page 4 HUFA76419D3ST Datasheet Page 5 HUFA76419D3ST Datasheet Page 6 HUFA76419D3ST Datasheet Page 7 HUFA76419D3ST Datasheet Page 8 HUFA76419D3ST Datasheet Page 9 HUFA76419D3ST Datasheet Page 10

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • HUFA76419D3S Datasheet
  • where to find HUFA76419D3S
  • ON Semiconductor

  • ON Semiconductor HUFA76419D3S
  • HUFA76419D3S PDF Datasheet
  • HUFA76419D3S Stock

  • HUFA76419D3S Pinout
  • Datasheet HUFA76419D3S
  • HUFA76419D3S Supplier

  • ON Semiconductor Distributor
  • HUFA76419D3S Price
  • HUFA76419D3S Distributor

HUFA76419D3S Specifications

ManufacturerON Semiconductor
SeriesUltraFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs37mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs27.5nC @ 10V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds900pF @ 25V
FET Feature-
Power Dissipation (Max)75W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252AA
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

APT31M100B2

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 8™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

32A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

380mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

260nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

8500pF @ 25V

FET Feature

-

Power Dissipation (Max)

1040W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

T-MAX™ [B2]

Package / Case

TO-247-3 Variant

IRF737LCPBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

6.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

750mOhm @ 3.7A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

430pF @ 25V

FET Feature

-

Power Dissipation (Max)

74W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

NVMFS5H663NLWFT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

STP11N60DM2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ DM2

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

420mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16.5nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

614pF @ 100V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

IPP50R399CPXKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

399mOhm @ 4.9A, 10V

Vgs(th) (Max) @ Id

3.5V @ 330µA

Gate Charge (Qg) (Max) @ Vgs

4nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

890pF @ 100V

FET Feature

-

Power Dissipation (Max)

83W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3

Package / Case

TO-220-3

Recently Sold

TL074ID

TL074ID

STMicroelectronics

IC OPAMP JFET 4 CIRCUIT 14SO

AD835ARZ

AD835ARZ

Analog Devices

IC MULTIPLIER 4-QUADRANT 8-SOIC

NCP3064BDR2G

NCP3064BDR2G

ON Semiconductor

IC REG BUCK BST ADJ 1.5A 8SOIC

LTC1726IS8-2.5#PBF

LTC1726IS8-2.5#PBF

Linear Technology/Analog Devices

IC TRPL SPLY MONITOR 2.5V 8-SOIC

LTM4608AMPY

LTM4608AMPY

Linear Technology/Analog Devices

DC DC CONVERTER 0.6-5V 8A

REF02CSZ

REF02CSZ

Analog Devices

IC VREF SERIES 5V 8SOIC

SMBJ15A

SMBJ15A

Microsemi

TVS DIODE 15V 24.4V DO214AA

LTC4300A-1CMS8#PBF

LTC4300A-1CMS8#PBF

Linear Technology/Analog Devices

IC ACCELERATOR I2C HOTSWAP 8MSOP

GS-R424

GS-R424

STMicroelectronics

DC DC CONVERTER 24V 4A

F951E106MAAAQ2

F951E106MAAAQ2

CAP TANT 10UF 20% 25V 1206

SUCS62412C

SUCS62412C

Cosel

DC DC CONVERTER 12V

SL16010DC

SL16010DC

Silicon Labs

IC CLOCK AMD GRAPHICS 10TDFN