HN4K03JUTE85LF
For Reference Only
| Part Number | HN4K03JUTE85LF |
| PNEDA Part # | HN4K03JUTE85LF |
| Description | MOSFET N-CH 20V 0.1A USV |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 2,376 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 3 - Apr 8 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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HN4K03JUTE85LF Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
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| Mfr. Part Number | HN4K03JUTE85LF |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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HN4K03JUTE85LF Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V |
| Rds On (Max) @ Id, Vgs | 12Ohm @ 10mA, 2.5V |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Vgs (Max) | 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 8.5pF @ 3V |
| FET Feature | - |
| Power Dissipation (Max) | 200mW (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | USV |
| Package / Case | 5-TSSOP, SC-70-5, SOT-353 |
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