HN3C10FUTE85LF
For Reference Only
| Part Number | HN3C10FUTE85LF |
| PNEDA Part # | HN3C10FUTE85LF |
| Description | RF TRANS 2 NPN 12V 7GHZ US6 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 8,244 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 19 - Apr 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
HN3C10FUTE85LF Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
|
| Mfr. Part Number | HN3C10FUTE85LF |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- HN3C10FUTE85LF Datasheet
- where to find HN3C10FUTE85LF
- Toshiba Semiconductor and Storage
- Toshiba Semiconductor and Storage HN3C10FUTE85LF
- HN3C10FUTE85LF PDF Datasheet
- HN3C10FUTE85LF Stock
- HN3C10FUTE85LF Pinout
- Datasheet HN3C10FUTE85LF
- HN3C10FUTE85LF Supplier
- Toshiba Semiconductor and Storage Distributor
- HN3C10FUTE85LF Price
- HN3C10FUTE85LF Distributor
HN3C10FUTE85LF Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Transistor Type | 2 NPN (Dual) |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Frequency - Transition | 7GHz |
| Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz |
| Gain | 11.5dB |
| Power - Max | 200mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 20mA, 10V |
| Current - Collector (Ic) (Max) | 80mA |
| Operating Temperature | - |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | US6 |
The Products You May Be Interested In
|
Manufacturer Microsemi Corporation Series - Transistor Type - Voltage - Collector Emitter Breakdown (Max) - Frequency - Transition - Noise Figure (dB Typ @ f) - Gain - Power - Max - DC Current Gain (hFE) (Min) @ Ic, Vce - Current - Collector (Ic) (Max) - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer Renesas Electronics America Inc. Series - Transistor Type 5 PNP Voltage - Collector Emitter Breakdown (Max) 15V Frequency - Transition 5.5GHz Noise Figure (dB Typ @ f) 3.5dB @ 1GHz Gain - Power - Max 150mW DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 10mA, 2V Current - Collector (Ic) (Max) 65mA Operating Temperature 175°C (TJ) Mounting Type Surface Mount Package / Case 16-VFQFN Exposed Pad Supplier Device Package 16-QFN (3x3) |
Manufacturer ON Semiconductor Series - Transistor Type PNP Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 600MHz Noise Figure (dB Typ @ f) - Gain - Power - Max 225mW DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V Current - Collector (Ic) (Max) 50mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 (TO-236) |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 30V Frequency - Transition 700MHz Noise Figure (dB Typ @ f) 2dB ~ 3dB @ 200MHz Gain 20dB ~ 24dB Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 2mA, 10V Current - Collector (Ic) (Max) 20mA Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 24V Frequency - Transition 2.5GHz Noise Figure (dB Typ @ f) - Gain 7.8dB ~ 8.5dB Power - Max 13W DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 200mA, 5V Current - Collector (Ic) (Max) 1.5A Operating Temperature 200°C (TJ) Mounting Type Stud Mount Package / Case 55FT Supplier Device Package 55FT |
