HIP6601BECBZ-T
For Reference Only
| Part Number | HIP6601BECBZ-T |
| PNEDA Part # | HIP6601BECBZ-T |
| Description | IC DRVR MOSFET SYNC BUCK 8EPSOIC |
| Manufacturer | Renesas Electronics America Inc. |
| Unit Price | Request a Quote |
| In Stock | 8,802 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 17 - Mar 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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HIP6601BECBZ-T Resources
| Brand | Renesas Electronics America Inc. |
| ECAD Module |
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| Mfr. Part Number | HIP6601BECBZ-T |
| Category | Semiconductors › Power Management ICs › PMIC - Gate Drivers |
| Datasheet |
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HIP6601BECBZ-T Specifications
| Manufacturer | Renesas Electronics America Inc. |
| Series | - |
| Driven Configuration | Half-Bridge |
| Channel Type | Synchronous |
| Number of Drivers | 2 |
| Gate Type | N-Channel MOSFET |
| Voltage - Supply | 10.8V ~ 13.2V |
| Logic Voltage - VIL, VIH | - |
| Current - Peak Output (Source, Sink) | - |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 15V |
| Rise / Fall Time (Typ) | 20ns, 20ns |
| Operating Temperature | 0°C ~ 125°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
| Supplier Device Package | 8-SOIC-EP |
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Manufacturer Microchip Technology Series - Driven Configuration Low-Side Channel Type Independent Number of Drivers 2 Gate Type N-Channel MOSFET Voltage - Supply 4.5V ~ 20V Logic Voltage - VIL, VIH 0.8V, 2.4V Current - Peak Output (Source, Sink) 1.5A, 1.5A Input Type Non-Inverting High Side Voltage - Max (Bootstrap) - Rise / Fall Time (Typ) 20ns, 18ns Operating Temperature -40°C ~ 125°C (TJ) Mounting Type Surface Mount Package / Case 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad Supplier Device Package 8-MSOP-EP |
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