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HAT2170HWS-E

HAT2170HWS-E

For Reference Only

Part Number HAT2170HWS-E
PNEDA Part # HAT2170HWS-E
Description MOSFET N-CH LFPAK-5
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 4,410
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HAT2170HWS-E Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberHAT2170HWS-E
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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HAT2170HWS-E Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C45A (Ta)
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Rds On (Max) @ Id, Vgs4.2mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs62nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4650pF @ 10V
FET Feature-
Power Dissipation (Max)30W (Tc)
Operating Temperature150°C
Mounting TypeSurface Mount
Supplier Device Package5-LFPAK
Package / CaseSC-100, SOT-669

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