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H11G2W

H11G2W

For Reference Only

Part Number H11G2W
PNEDA Part # H11G2W
Description OPTOISO 5.3KV DARL W/BASE 6DIP
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,388
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

H11G2W Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberH11G2W
CategorySemiconductorsIsolatorsOptoisolators - Transistor, Photovoltaic Output
Datasheet
H11G2W, H11G2W Datasheet (Total Pages: 6, Size: 129.69 KB)
PDFH11G3W Datasheet Cover
H11G3W Datasheet Page 2 H11G3W Datasheet Page 3 H11G3W Datasheet Page 4 H11G3W Datasheet Page 5 H11G3W Datasheet Page 6

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H11G2W Specifications

ManufacturerON Semiconductor
Series-
Number of Channels1
Voltage - Isolation5300Vrms
Current Transfer Ratio (Min)1000% @ 10mA
Current Transfer Ratio (Max)-
Turn On / Turn Off Time (Typ)5µs, 100µs
Rise / Fall Time (Typ)-
Input TypeDC
Output TypeDarlington with Base
Voltage - Output (Max)80V
Current - Output / Channel-
Voltage - Forward (Vf) (Typ)1.3V
Current - DC Forward (If) (Max)60mA
Vce Saturation (Max)1V
Operating Temperature-55°C ~ 100°C
Mounting TypeThrough Hole
Package / Case6-DIP (0.400", 10.16mm)
Supplier Device Package6-DIP

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