H11G2M_F132
For Reference Only
| Part Number | H11G2M_F132 |
| PNEDA Part # | H11G2M_F132 |
| Description | OPTOISO 4.17KV DARL W/BASE 6DIP |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 6,444 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 17 - Apr 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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H11G2M_F132 Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | H11G2M_F132 |
| Category | Semiconductors › Isolators › Optoisolators - Transistor, Photovoltaic Output |
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Logistics Mode
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H11G2M_F132 Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Number of Channels | 1 |
| Voltage - Isolation | 4170Vrms |
| Current Transfer Ratio (Min) | 1000% @ 10mA |
| Current Transfer Ratio (Max) | - |
| Turn On / Turn Off Time (Typ) | 5µs, 100µs |
| Rise / Fall Time (Typ) | - |
| Input Type | DC |
| Output Type | Darlington with Base |
| Voltage - Output (Max) | 80V |
| Current - Output / Channel | - |
| Voltage - Forward (Vf) (Typ) | 1.3V |
| Current - DC Forward (If) (Max) | 60mA |
| Vce Saturation (Max) | 1V |
| Operating Temperature | -40°C ~ 100°C |
| Mounting Type | Through Hole |
| Package / Case | 6-DIP (0.300", 7.62mm) |
| Supplier Device Package | 6-DIP |
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