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GP2M007A080F

GP2M007A080F

For Reference Only

Part Number GP2M007A080F
PNEDA Part # GP2M007A080F
Description MOSFET N-CH 800V 7A TO220F
Manufacturer Global Power Technologies Group
Unit Price Request a Quote
In Stock 5,490
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

GP2M007A080F Resources

Brand Global Power Technologies Group
ECAD Module ECAD
Mfr. Part NumberGP2M007A080F
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
GP2M007A080F, GP2M007A080F Datasheet (Total Pages: 5, Size: 242.94 KB)
PDFGP2M007A080F Datasheet Cover
GP2M007A080F Datasheet Page 2 GP2M007A080F Datasheet Page 3 GP2M007A080F Datasheet Page 4 GP2M007A080F Datasheet Page 5

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GP2M007A080F Specifications

ManufacturerGlobal Power Technologies Group
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.9Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1410pF @ 25V
FET Feature-
Power Dissipation (Max)50W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F
Package / CaseTO-220-3 Full Pack

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