GP2M005A050PG
For Reference Only
Part Number | GP2M005A050PG |
PNEDA Part # | GP2M005A050PG |
Description | MOSFET N-CH 500V 4.5A IPAK |
Manufacturer | Global Power Technologies Group |
Unit Price | Request a Quote |
In Stock | 6,228 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 28 - Dec 3 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
GP2M005A050PG Resources
Brand | Global Power Technologies Group |
ECAD Module | |
Mfr. Part Number | GP2M005A050PG |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- GP2M005A050PG Datasheet
- where to find GP2M005A050PG
- Global Power Technologies Group
- Global Power Technologies Group GP2M005A050PG
- GP2M005A050PG PDF Datasheet
- GP2M005A050PG Stock
- GP2M005A050PG Pinout
- Datasheet GP2M005A050PG
- GP2M005A050PG Supplier
- Global Power Technologies Group Distributor
- GP2M005A050PG Price
- GP2M005A050PG Distributor
GP2M005A050PG Specifications
Manufacturer | Global Power Technologies Group |
Series | - |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.5Ohm @ 2.25A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 645pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 98.4W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-PAK |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
The Products You May Be Interested In
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 8.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 720mOhm @ 6A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 45.4nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 30V FET Feature - Power Dissipation (Max) 2W (Ta), 40W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FI(LS) Package / Case TO-220-3 Full Pack |
Renesas Electronics America Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 45A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.7mOhm @ 22.5A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 27nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4300pF @ 10V FET Feature - Power Dissipation (Max) 55W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package LFPAK Package / Case SC-100, SOT-669 |
ON Semiconductor Manufacturer ON Semiconductor Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 16.2A (Ta), 67A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 7.2mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2V @ 56µA Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1131pF @ 30V FET Feature - Power Dissipation (Max) 3.7W (Ta), 63W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN, 5 Leads |
Alpha & Omega Semiconductor Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 10.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V, 20V Rds On (Max) @ Id, Vgs 14mOhm @ 11A, 20V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 15V FET Feature - Power Dissipation (Max) 3.1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.2A (Tj) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 80mOhm @ 3.2A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.4nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 680pF @ 10V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 1.1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package ChipFET™ Package / Case 8-SMD, Flat Lead |