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GP2M002A065CG

GP2M002A065CG

For Reference Only

Part Number GP2M002A065CG
PNEDA Part # GP2M002A065CG
Description MOSFET N-CH 650V 1.8A DPAK
Manufacturer Global Power Technologies Group
Unit Price Request a Quote
In Stock 5,076
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

GP2M002A065CG Resources

Brand Global Power Technologies Group
ECAD Module ECAD
Mfr. Part NumberGP2M002A065CG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
GP2M002A065CG, GP2M002A065CG Datasheet (Total Pages: 6, Size: 516.85 KB)
PDFGP2M002A065PG Datasheet Cover
GP2M002A065PG Datasheet Page 2 GP2M002A065PG Datasheet Page 3 GP2M002A065PG Datasheet Page 4 GP2M002A065PG Datasheet Page 5 GP2M002A065PG Datasheet Page 6

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GP2M002A065CG Specifications

ManufacturerGlobal Power Technologies Group
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.6Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.5nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds353pF @ 25V
FET Feature-
Power Dissipation (Max)52W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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