Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

GP2M002A060PG

GP2M002A060PG

For Reference Only

Part Number GP2M002A060PG
PNEDA Part # GP2M002A060PG
Description MOSFET N-CH 600V 2A
Manufacturer Global Power Technologies Group
Unit Price Request a Quote
In Stock 2,070
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

GP2M002A060PG Resources

Brand Global Power Technologies Group
ECAD Module ECAD
Mfr. Part NumberGP2M002A060PG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
GP2M002A060PG, GP2M002A060PG Datasheet (Total Pages: 6, Size: 523.07 KB)
PDFGP2M002A060PG Datasheet Cover
GP2M002A060PG Datasheet Page 2 GP2M002A060PG Datasheet Page 3 GP2M002A060PG Datasheet Page 4 GP2M002A060PG Datasheet Page 5 GP2M002A060PG Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • GP2M002A060PG Datasheet
  • where to find GP2M002A060PG
  • Global Power Technologies Group

  • Global Power Technologies Group GP2M002A060PG
  • GP2M002A060PG PDF Datasheet
  • GP2M002A060PG Stock

  • GP2M002A060PG Pinout
  • Datasheet GP2M002A060PG
  • GP2M002A060PG Supplier

  • Global Power Technologies Group Distributor
  • GP2M002A060PG Price
  • GP2M002A060PG Distributor

GP2M002A060PG Specifications

ManufacturerGlobal Power Technologies Group
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs9nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds360pF @ 25V
FET Feature-
Power Dissipation (Max)52.1W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

The Products You May Be Interested In

2SK2744(F)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

50V

Current - Continuous Drain (Id) @ 25°C

45A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

20mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

3.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

68nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2300pF @ 10V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P(N)

Package / Case

TO-3P-3, SC-65-3

TSM80N1R2CH C5G

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

5.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.2Ohm @ 2.75A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

19.4nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

685pF @ 100V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-251 (IPAK)

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

IRFB7430PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®, StrongIRFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

195A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

1.3mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

3.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

460nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

14240pF @ 25V

FET Feature

-

Power Dissipation (Max)

375W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

APT10035B2LLG

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 7®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

28A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

350mOhm @ 14A, 10V

Vgs(th) (Max) @ Id

5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

186nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

5185pF @ 25V

FET Feature

-

Power Dissipation (Max)

690W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

T-MAX™ [B2]

Package / Case

TO-247-3 Variant

NTTFS4C13NTWG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

7.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9.4mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.8nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

770pF @ 15V

FET Feature

-

Power Dissipation (Max)

780mW (Ta), 21.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-WDFN (3.3x3.3)

Package / Case

8-PowerWDFN

Recently Sold

SSC54-E3/57T

SSC54-E3/57T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 5A DO214AB

AD7305BRZ

AD7305BRZ

Analog Devices

IC DAC 8BIT V-OUT 20SOIC

CAT24M01WI-GT3

CAT24M01WI-GT3

ON Semiconductor

IC EEPROM 1M I2C 1MHZ 8SOIC

3224W-1-203E

3224W-1-203E

Bourns

TRIMMER 20K OHM 0.25W J LEAD TOP

MCP41010T-I/SN

MCP41010T-I/SN

Microchip Technology

IC DGTL POT 10KOHM 256TAP 8SOIC

MF-R090

MF-R090

Bourns

PTC RESET FUSE 60V 900MA RADIAL

JAN2N2222A

JAN2N2222A

Microsemi

TRANS NPN 50V 0.8A

AMT102-V

AMT102-V

CUI

ROTARY ENCODER INCREMENT PROGPPR

7508110151

7508110151

Wurth Electronics Midcom

WE-UNIT OFFLINE TRANSFORMER

LTC2855IDE

LTC2855IDE

Linear Technology/Analog Devices

IC TRANSCEIVER FULL 1/1 12DFN

ADM1087AKSZ-REEL7

ADM1087AKSZ-REEL7

Analog Devices

IC SIMPLE SEQUENCER OD SC70-6

NOIP2SE1300A-QDI

NOIP2SE1300A-QDI

ON Semiconductor

IC IMAGE SENSOR 1.3MP 48LCC