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GP1M020A060N

GP1M020A060N

For Reference Only

Part Number GP1M020A060N
PNEDA Part # GP1M020A060N
Description MOSFET N-CH 600V 20A TO3PN
Manufacturer Global Power Technologies Group
Unit Price Request a Quote
In Stock 6,138
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

GP1M020A060N Resources

Brand Global Power Technologies Group
ECAD Module ECAD
Mfr. Part NumberGP1M020A060N
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
GP1M020A060N, GP1M020A060N Datasheet (Total Pages: 5, Size: 776.49 KB)
PDFGP1M020A060N Datasheet Cover
GP1M020A060N Datasheet Page 2 GP1M020A060N Datasheet Page 3 GP1M020A060N Datasheet Page 4 GP1M020A060N Datasheet Page 5

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GP1M020A060N Specifications

ManufacturerGlobal Power Technologies Group
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs330mOhm @ 10A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs76nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2097pF @ 25V
FET Feature-
Power Dissipation (Max)347W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3PN
Package / CaseTO-3P-3, SC-65-3

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