Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

GP1M003A040CG

GP1M003A040CG

For Reference Only

Part Number GP1M003A040CG
PNEDA Part # GP1M003A040CG
Description MOSFET N-CH 400V 2A DPAK
Manufacturer Global Power Technologies Group
Unit Price Request a Quote
In Stock 2,160
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Dec 6 - Dec 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

GP1M003A040CG Resources

Brand Global Power Technologies Group
ECAD Module ECAD
Mfr. Part NumberGP1M003A040CG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
GP1M003A040CG, GP1M003A040CG Datasheet (Total Pages: 6, Size: 500.43 KB)
PDFGP1M003A040PG Datasheet Cover
GP1M003A040PG Datasheet Page 2 GP1M003A040PG Datasheet Page 3 GP1M003A040PG Datasheet Page 4 GP1M003A040PG Datasheet Page 5 GP1M003A040PG Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • GP1M003A040CG Datasheet
  • where to find GP1M003A040CG
  • Global Power Technologies Group

  • Global Power Technologies Group GP1M003A040CG
  • GP1M003A040CG PDF Datasheet
  • GP1M003A040CG Stock

  • GP1M003A040CG Pinout
  • Datasheet GP1M003A040CG
  • GP1M003A040CG Supplier

  • Global Power Technologies Group Distributor
  • GP1M003A040CG Price
  • GP1M003A040CG Distributor

GP1M003A040CG Specifications

ManufacturerGlobal Power Technologies Group
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)400V
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs3.7nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds210pF @ 25V
FET Feature-
Power Dissipation (Max)30W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

LP0701N3-G

Microchip Technology

Manufacturer

Microchip Technology

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

16.5V

Current - Continuous Drain (Id) @ 25°C

500mA (Tj)

Drive Voltage (Max Rds On, Min Rds On)

2V, 5V

Rds On (Max) @ Id, Vgs

1.5Ohm @ 300mA, 5V

Vgs(th) (Max) @ Id

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

250pF @ 15V

FET Feature

-

Power Dissipation (Max)

1W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

STB10N65K3

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH3™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1Ohm @ 3.6A, 10V

Vgs(th) (Max) @ Id

4.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

42nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1180pF @ 25V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPB77N06S212ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

77A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

11.7mOhm @ 38A, 10V

Vgs(th) (Max) @ Id

4V @ 93µA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1770pF @ 25V

FET Feature

-

Power Dissipation (Max)

158W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPD50P04P4L11ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

10.6mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2.2V @ 85µA

Gate Charge (Qg) (Max) @ Vgs

59nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

3900pF @ 25V

FET Feature

-

Power Dissipation (Max)

58W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3-313

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

SPD30N03S2L-07

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.7mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2V @ 85µA

Gate Charge (Qg) (Max) @ Vgs

68nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2530pF @ 25V

FET Feature

-

Power Dissipation (Max)

136W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

SE5534AN

SE5534AN

ON Semiconductor

IC OPAMP GP 1 CIRCUIT 8DIP

24LC02B-I/ST

24LC02B-I/ST

Microchip Technology

IC EEPROM 2K I2C 400KHZ 8TSSOP

ADF4351BCPZ

ADF4351BCPZ

Analog Devices

IC SYNTH PLL VCO 32LFCSP

PTH05050WAH

PTH05050WAH

Artesyn Embedded Technologies

DC DC CONVERTER 0.8-3.6V 21W

7M-12.000MAAE-T

7M-12.000MAAE-T

TXC

CRYSTAL 12.0000MHZ 12PF SMD

NAU7802SGI

NAU7802SGI

Nuvoton Technology

IC ADC 24BIT SIGMA-DELTA 16SOP

MBRA210LT3G

MBRA210LT3G

ON Semiconductor

DIODE SCHOTTKY 10V 2A SMA

MIC69303YME-TR

MIC69303YME-TR

Microchip Technology

IC REG LINEAR POS ADJ 3A 8SOIC

3-1462039-1

3-1462039-1

TE Connectivity Potter & Brumfield Relays

RELAY TELECOM DPDT 2A 12VDC

20IMX35D05D05-8G

20IMX35D05D05-8G

Bel Power Solutions

DC DC CONVERTER 5V 5V 5V 35W

AS5163-HTSM

AS5163-HTSM

ams

SENSOR ANGLE 360DEG SMD

MIC5235-3.3YM5-TR

MIC5235-3.3YM5-TR

Microchip Technology

IC REG LINEAR 3.3V 150MA SOT23-5