GP10YE-M3/54
For Reference Only
| Part Number | GP10YE-M3/54 |
| PNEDA Part # | GP10YE-M3-54 |
| Description | DIODE GEN PURPOSE DO204AL |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 3,330 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 27 - Dec 2 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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GP10YE-M3/54 Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | GP10YE-M3/54 |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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GP10YE-M3/54 Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | * |
| Diode Type | - |
| Voltage - DC Reverse (Vr) (Max) | - |
| Current - Average Rectified (Io) | - |
| Voltage - Forward (Vf) (Max) @ If | - |
| Speed | - |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | - |
| Capacitance @ Vr, F | - |
| Mounting Type | Through Hole |
| Package / Case | - |
| Supplier Device Package | - |
| Operating Temperature - Junction | - |
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Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 5.5A Voltage - Forward (Vf) (Max) @ If 770mV @ 5A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 100V Capacitance @ Vr, F 183pF @ 5V, 1MHz Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package D-PAK (TO-252AA) Operating Temperature - Junction -40°C ~ 150°C |
Manufacturer Central Semiconductor Corp Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 50V Current - Average Rectified (Io) 1A (DC) Voltage - Forward (Vf) (Max) @ If 550mV @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 500µA @ 50V Capacitance @ Vr, F 50pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case 8-TDFN Exposed Pad Supplier Device Package TLM832DS Operating Temperature - Junction -65°C ~ 150°C |
Manufacturer Microsemi Corporation Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 300V Current - Average Rectified (Io) 60A Voltage - Forward (Vf) (Max) @ If 1.4V @ 60A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 38ns Current - Reverse Leakage @ Vr 250µA @ 300V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-247-2 Supplier Device Package TO-247 Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer Vishay Semiconductor Diodes Division Series Automotive, AEC-Q101 Diode Type Avalanche Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 2A Voltage - Forward (Vf) (Max) @ If 1.1V @ 2A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 25ns Current - Reverse Leakage @ Vr 1µA @ 100V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case DO-214AC, SMA Supplier Device Package DO-214AC (SMA) Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Microsemi Corporation Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 75V Current - Average Rectified (Io) 200mA Voltage - Forward (Vf) (Max) @ If 1V @ 10mA Speed Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr) 4ns Current - Reverse Leakage @ Vr 100nA @ 50V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case DO-204AH, DO-35, Axial Supplier Device Package DO-35 Operating Temperature - Junction -65°C ~ 175°C |
