GP10-4003E-E3/53
For Reference Only
| Part Number | GP10-4003E-E3/53 |
| PNEDA Part # | GP10-4003E-E3-53 |
| Description | DIODE GEN PURP 200V 1A DO204AL |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 7,218 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 18 - Mar 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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GP10-4003E-E3/53 Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | GP10-4003E-E3/53 |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
Payment Method
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- Some orders may require a minimum amount of $100.00.
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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GP10-4003E-E3/53 Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | Automotive, AEC-Q101, Superectifier® |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 200V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 1.1V @ 1A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 3µs |
| Current - Reverse Leakage @ Vr | 5µA @ 200V |
| Capacitance @ Vr, F | 8pF @ 4V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | DO-204AL, DO-41, Axial |
| Supplier Device Package | DO-204AL (DO-41) |
| Operating Temperature - Junction | -65°C ~ 175°C |
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Manufacturer Powerex Inc. Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1000V Current - Average Rectified (Io) 400A Voltage - Forward (Vf) (Max) @ If 1.4V @ 400A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 25mA @ 1000V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case DO-200AA, A-PUK Supplier Device Package DO-200AA, R62 Operating Temperature - Junction - |
Manufacturer Taiwan Semiconductor Corporation Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 90V Current - Average Rectified (Io) 2A Voltage - Forward (Vf) (Max) @ If 850mV @ 2A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 100µA @ 90V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case DO-219AB Supplier Device Package Sub SMA Operating Temperature - Junction -55°C ~ 150°C |
