GKI03080
For Reference Only
| Part Number | GKI03080 |
| PNEDA Part # | GKI03080 |
| Description | MOSFET N-CH 30V 26A 8DFN |
| Manufacturer | Sanken |
| Unit Price | Request a Quote |
| In Stock | 2,214 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 18 - Apr 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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GKI03080 Resources
| Brand | Sanken |
| ECAD Module |
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| Mfr. Part Number | GKI03080 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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GKI03080 Specifications
| Manufacturer | Sanken |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 8.2mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 16.3nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1030pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 40W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-DFN (5x6) |
| Package / Case | 8-PowerTDFN |
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Manufacturer Rohm Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 160mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 6.4nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 230pF @ 10V FET Feature - Power Dissipation (Max) 320mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TUMT3 Package / Case 3-SMD, Flat Leads |
