GI816-E3/73
For Reference Only
| Part Number | GI816-E3/73 |
| PNEDA Part # | GI816-E3-73 |
| Description | DIODE GEN PURPOSE DO204AC |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 3,942 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 27 - Dec 2 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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GI816-E3/73 Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | GI816-E3/73 |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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GI816-E3/73 Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | * |
| Diode Type | - |
| Voltage - DC Reverse (Vr) (Max) | - |
| Current - Average Rectified (Io) | - |
| Voltage - Forward (Vf) (Max) @ If | - |
| Speed | - |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | - |
| Capacitance @ Vr, F | - |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
| Operating Temperature - Junction | - |
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Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1000V Current - Average Rectified (Io) 12A Voltage - Forward (Vf) (Max) @ If 1.26V @ 38A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 12mA @ 1000V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AA, DO-4, Stud Supplier Device Package DO-203AA Operating Temperature - Junction -65°C ~ 175°C |
Manufacturer Toshiba Semiconductor and Storage Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 40V Current - Average Rectified (Io) 100mA Voltage - Forward (Vf) (Max) @ If 600mV @ 100mA Speed Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 5µA @ 40V Capacitance @ Vr, F 25pF @ 0V, 1MHz Mounting Type Surface Mount Package / Case SC-79, SOD-523 Supplier Device Package ESC Operating Temperature - Junction 125°C (Max) |
Manufacturer Taiwan Semiconductor Corporation Series Automotive, AEC-Q101 Diode Type Standard Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 4A Voltage - Forward (Vf) (Max) @ If 1V @ 4A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 35ns Current - Reverse Leakage @ Vr 5µA @ 100V Capacitance @ Vr, F 100pF @ 4V, 1MHz Mounting Type Through Hole Package / Case DO-201AD, Axial Supplier Device Package DO-201AD Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Diodes Incorporated Series Automotive, AEC-Q101, TrenchSBR Diode Type Super Barrier Voltage - DC Reverse (Vr) (Max) 50V Current - Average Rectified (Io) 20A Voltage - Forward (Vf) (Max) @ If 500mV @ 20A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 48ns Current - Reverse Leakage @ Vr 500µA @ 50V Capacitance @ Vr, F 350pF @ 50V, 1MHz Mounting Type Surface Mount Package / Case 8-PowerTDFN Supplier Device Package PowerDI5060-8 Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer Sanken Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 5A Voltage - Forward (Vf) (Max) @ If 920mV @ 5A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 100ns Current - Reverse Leakage @ Vr 100µA @ 200V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-2 Full Pack Supplier Device Package TO-220F-2L Operating Temperature - Junction -40°C ~ 150°C |
