GB10SLT12-214
For Reference Only
| Part Number | GB10SLT12-214 |
| PNEDA Part # | GB10SLT12-214 |
| Description | SIC SCHOTTKY DIODE 1200V 10A |
| Manufacturer | GeneSiC Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 5,742 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Feb 19 - Feb 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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GB10SLT12-214 Resources
| Brand | GeneSiC Semiconductor |
| ECAD Module |
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| Mfr. Part Number | GB10SLT12-214 |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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GB10SLT12-214 Specifications
| Manufacturer | GeneSiC Semiconductor |
| Series | * |
| Diode Type | - |
| Voltage - DC Reverse (Vr) (Max) | - |
| Current - Average Rectified (Io) | - |
| Voltage - Forward (Vf) (Max) @ If | - |
| Speed | - |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | - |
| Capacitance @ Vr, F | - |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
| Operating Temperature - Junction | - |
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Manufacturer IXYS Series - Diode Type Avalanche Voltage - DC Reverse (Vr) (Max) 1600V Current - Average Rectified (Io) 49A Voltage - Forward (Vf) (Max) @ If 1.55V @ 150A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 4mA @ 1600V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AB, DO-5, Stud Supplier Device Package DO-203AB Operating Temperature - Junction -40°C ~ 180°C |
Manufacturer Micro Commercial Co Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1V @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 50ns Current - Reverse Leakage @ Vr 5µA @ 200V Capacitance @ Vr, F 20pF @ 4V, 1MHz Mounting Type Through Hole Package / Case DO-204AC, DO-15, Axial Supplier Device Package DO-41 Operating Temperature - Junction -55°C ~ 125°C |
Manufacturer Vishay Semiconductor Diodes Division Series eSMP® Diode Type Standard Voltage - DC Reverse (Vr) (Max) 800V Current - Average Rectified (Io) 4A Voltage - Forward (Vf) (Max) @ If 1.1V @ 4A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 2.5µs Current - Reverse Leakage @ Vr 10µA @ 800V Capacitance @ Vr, F 30pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case TO-277, 3-PowerDFN Supplier Device Package TO-277A (SMPC) Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Nexperia USA Inc. Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 40V Current - Average Rectified (Io) 120mA (DC) Voltage - Forward (Vf) (Max) @ If 1V @ 40mA Speed Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10µA @ 40V Capacitance @ Vr, F 5pF @ 0V, 1MHz Mounting Type Surface Mount Package / Case SOD-882 Supplier Device Package DFN1006-2 Operating Temperature - Junction 150°C (Max) |
