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FZ750R65KE3NOSA1

FZ750R65KE3NOSA1

For Reference Only

Part Number FZ750R65KE3NOSA1
PNEDA Part # FZ750R65KE3NOSA1
Description MODULE IGBT A-IHV190-6
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,200
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FZ750R65KE3NOSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberFZ750R65KE3NOSA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Modules

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FZ750R65KE3NOSA1 Specifications

ManufacturerInfineon Technologies
Series-
IGBT Type-
ConfigurationSingle
Voltage - Collector Emitter Breakdown (Max)6500V
Current - Collector (Ic) (Max)750A
Power - Max14500W
Vce(on) (Max) @ Vge, Ic3.4V @ 15V, 750A
Current - Collector Cutoff (Max)5mA
Input Capacitance (Cies) @ Vce205nF @ 25V
InputStandard
NTC ThermistorNo
Operating Temperature-50°C ~ 125°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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Vce(on) (Max) @ Vge, Ic

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Current - Collector (Ic) (Max)

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Vce(on) (Max) @ Vge, Ic

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Current - Collector Cutoff (Max)

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Input Capacitance (Cies) @ Vce

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Vce(on) (Max) @ Vge, Ic

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Current - Collector Cutoff (Max)

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Input Capacitance (Cies) @ Vce

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Operating Temperature

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