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FZ1200R33KF2CNOSA1

FZ1200R33KF2CNOSA1

For Reference Only

Part Number FZ1200R33KF2CNOSA1
PNEDA Part # FZ1200R33KF2CNOSA1
Description MODULE IGBT A-IHV190-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,628
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FZ1200R33KF2CNOSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberFZ1200R33KF2CNOSA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Modules

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FZ1200R33KF2CNOSA1 Specifications

ManufacturerInfineon Technologies
Series-
IGBT Type-
ConfigurationFull Bridge
Voltage - Collector Emitter Breakdown (Max)3300V
Current - Collector (Ic) (Max)2000A
Power - Max14500W
Vce(on) (Max) @ Vge, Ic4.25V @ 15V, 1200A
Current - Collector Cutoff (Max)12mA
Input Capacitance (Cies) @ Vce150nF @ 25V
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 125°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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Current - Collector (Ic) (Max)

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Vce(on) (Max) @ Vge, Ic

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Current - Collector Cutoff (Max)

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Input Capacitance (Cies) @ Vce

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Current - Collector (Ic) (Max)

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Power - Max

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Vce(on) (Max) @ Vge, Ic

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Current - Collector Cutoff (Max)

750µA

Input Capacitance (Cies) @ Vce

4.5nF @ 25V

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Operating Temperature

-55°C ~ 150°C (TJ)

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Chassis Mount

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