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FQU8P10TU

FQU8P10TU

For Reference Only

Part Number FQU8P10TU
PNEDA Part # FQU8P10TU
Description MOSFET P-CH 100V 6.6A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 36,540
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQU8P10TU Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQU8P10TU
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQU8P10TU, FQU8P10TU Datasheet (Total Pages: 11, Size: 1,409.02 KB)
PDFFQD8P10TM Datasheet Cover
FQD8P10TM Datasheet Page 2 FQD8P10TM Datasheet Page 3 FQD8P10TM Datasheet Page 4 FQD8P10TM Datasheet Page 5 FQD8P10TM Datasheet Page 6 FQD8P10TM Datasheet Page 7 FQD8P10TM Datasheet Page 8 FQD8P10TM Datasheet Page 9 FQD8P10TM Datasheet Page 10 FQD8P10TM Datasheet Page 11

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FQU8P10TU Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs530mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds470pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 44W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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