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FQU7P06TU_NB82048

FQU7P06TU_NB82048

For Reference Only

Part Number FQU7P06TU_NB82048
PNEDA Part # FQU7P06TU_NB82048
Description MOSFET P-CH 60V 5.4A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,316
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQU7P06TU_NB82048 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQU7P06TU_NB82048
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQU7P06TU_NB82048, FQU7P06TU_NB82048 Datasheet (Total Pages: 9, Size: 707.74 KB)
PDFFQU7P06TU_NB82048 Datasheet Cover
FQU7P06TU_NB82048 Datasheet Page 2 FQU7P06TU_NB82048 Datasheet Page 3 FQU7P06TU_NB82048 Datasheet Page 4 FQU7P06TU_NB82048 Datasheet Page 5 FQU7P06TU_NB82048 Datasheet Page 6 FQU7P06TU_NB82048 Datasheet Page 7 FQU7P06TU_NB82048 Datasheet Page 8 FQU7P06TU_NB82048 Datasheet Page 9

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FQU7P06TU_NB82048 Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs451mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.2nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds295pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 28W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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