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FQU3N50CTU

FQU3N50CTU

For Reference Only

Part Number FQU3N50CTU
PNEDA Part # FQU3N50CTU
Description MOSFET N-CH 500V 2.5A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 34,410
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQU3N50CTU Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQU3N50CTU
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQU3N50CTU, FQU3N50CTU Datasheet (Total Pages: 10, Size: 1,264.42 KB)
PDFFQD3N50CTM Datasheet Cover
FQD3N50CTM Datasheet Page 2 FQD3N50CTM Datasheet Page 3 FQD3N50CTM Datasheet Page 4 FQD3N50CTM Datasheet Page 5 FQD3N50CTM Datasheet Page 6 FQD3N50CTM Datasheet Page 7 FQD3N50CTM Datasheet Page 8 FQD3N50CTM Datasheet Page 9 FQD3N50CTM Datasheet Page 10

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FQU3N50CTU Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.5Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds365pF @ 25V
FET Feature-
Power Dissipation (Max)35W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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