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FQU2N80TU

FQU2N80TU

For Reference Only

Part Number FQU2N80TU
PNEDA Part # FQU2N80TU
Description MOSFET N-CH 800V 1.8A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,752
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQU2N80TU Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQU2N80TU
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQU2N80TU, FQU2N80TU Datasheet (Total Pages: 9, Size: 725.68 KB)
PDFFQU2N80TU Datasheet Cover
FQU2N80TU Datasheet Page 2 FQU2N80TU Datasheet Page 3 FQU2N80TU Datasheet Page 4 FQU2N80TU Datasheet Page 5 FQU2N80TU Datasheet Page 6 FQU2N80TU Datasheet Page 7 FQU2N80TU Datasheet Page 8 FQU2N80TU Datasheet Page 9

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FQU2N80TU Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs6.3Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds550pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 50W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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