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FQU2N60TU

FQU2N60TU

For Reference Only

Part Number FQU2N60TU
PNEDA Part # FQU2N60TU
Description MOSFET N-CH 600V 2A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,838
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQU2N60TU Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQU2N60TU
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQU2N60TU, FQU2N60TU Datasheet (Total Pages: 9, Size: 562.93 KB)
PDFFQU2N60TU Datasheet Cover
FQU2N60TU Datasheet Page 2 FQU2N60TU Datasheet Page 3 FQU2N60TU Datasheet Page 4 FQU2N60TU Datasheet Page 5 FQU2N60TU Datasheet Page 6 FQU2N60TU Datasheet Page 7 FQU2N60TU Datasheet Page 8 FQU2N60TU Datasheet Page 9

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FQU2N60TU Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.7Ohm @ 1A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds350pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 45W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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