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FQU2N60CTU

FQU2N60CTU

For Reference Only

Part Number FQU2N60CTU
PNEDA Part # FQU2N60CTU
Description MOSFET N-CH 600V 1.9A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,716
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
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FQU2N60CTU Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQU2N60CTU
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQU2N60CTU, FQU2N60CTU Datasheet (Total Pages: 7, Size: 882.14 KB)
PDFFQD2N60CTM-WS Datasheet Cover
FQD2N60CTM-WS Datasheet Page 2 FQD2N60CTM-WS Datasheet Page 3 FQD2N60CTM-WS Datasheet Page 4 FQD2N60CTM-WS Datasheet Page 5 FQD2N60CTM-WS Datasheet Page 6 FQD2N60CTM-WS Datasheet Page 7

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FQU2N60CTU Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.7Ohm @ 950mA, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds235pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 44W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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