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FQU1N60TU

FQU1N60TU

For Reference Only

Part Number FQU1N60TU
PNEDA Part # FQU1N60TU
Description MOSFET N-CH 600V 1A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,394
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQU1N60TU Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQU1N60TU
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQU1N60TU, FQU1N60TU Datasheet (Total Pages: 9, Size: 543.8 KB)
PDFFQD1N60TM Datasheet Cover
FQD1N60TM Datasheet Page 2 FQD1N60TM Datasheet Page 3 FQD1N60TM Datasheet Page 4 FQD1N60TM Datasheet Page 5 FQD1N60TM Datasheet Page 6 FQD1N60TM Datasheet Page 7 FQD1N60TM Datasheet Page 8 FQD1N60TM Datasheet Page 9

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FQU1N60TU Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs11.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds150pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 30W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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